Atomic structure analysis of self-assembled ErSi2 nanowires formed on Si substrates

Ryouki Watanabe, Yusuke Katayama, Satoshi Yokoyama, Tomohiro Kobayashi, Takashi Meguro, Xinwei Zhao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

ErSi2 nanowires were fabricated on Si(1 1 0) substrates by a self-assembled growth process without a high vacuum systems. All the nanowires were highly parallel and along the Si〈0 1 1〉 direction. It was shown by structural investigations that the nanowires consisted of two types, which showed a similar surface morphology. The first type was ErSi2 nanowires buried into the Si substrate, and the other was ErSi2 thin layers covering on wire-like Si surface. The later may be the remained structure after evaporation of the first type during the high temperature annealing.

Original languageEnglish
Pages (from-to)1496-1498
Number of pages3
JournalMicroelectronic Engineering
Volume84
Issue number5-8
DOIs
Publication statusPublished - May 2007

Keywords

  • ErSi
  • Nanowire
  • Surface morphology
  • TEM-EDS

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