Atomic structure analysis of ErSi2 nanowires formed on Si(100) substrates

Yusuke Katayama, Satoshi Yokoyama, Tomohiro Kobayashi, Takashi Meguro, Xinwei Zhao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


ErSi2 nanowires were formed on Si(100) substrate by self-assembly. The wires were grown along the Si[011] and Si[01̄1] directions. Samples perpendicular and parallel to the growth direction of the wires were cut using a focused ion beam system for cross-sectional investigation. It was revealed that single-crystal ErSi2 nanowires had been formed. However, the crystal orientation between the wires was different. Samples grown at different temperatures were also investigated to analyze the growth mechanism of the ErSi2 nanowires. The growth process from the initial state to form ErSi2 nanowires is discussed.

Original languageEnglish
Pages (from-to)5015-5017
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number6 PART 2
Publication statusPublished - 20 Jun 2008


  • Crystal structure
  • ErSi
  • Growth mechanism
  • Nanowire
  • TEM


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