Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4 and Li-ion electrolyte thin films for physical reservoir computing

Wataru Namiki, Takashi Tsuchiya, Daiki Nishioka, Tohru Higuchi, Kazuya Terabe

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In recent years, ion-gating devices have been used in artificial neuromorphic computing and achieved high performance for time-series data processing. However, the origin of this performance still needs to be clarified. In this study, we fabricated an all-solid-state redox device with functional material Fe3O4 and Li-ion conducting solid electrolytes, and the transient response of the electrical resistance of the Fe3O4 thin film to time-series data input was investigated. The transition between high and low electrical resistance states was asymmetric, and residual Li-ion in the thin film led to a hysteresis effect. These unique features, which are induced by ion-electron dynamics coupling, contributes to the high performance of physical reservoir computing utilizing an ion-gating device.

Original languageEnglish
Article number03SP13
JournalJapanese Journal of Applied Physics
Volume63
Issue number3
DOIs
Publication statusPublished - 1 Mar 2024

Keywords

  • FeO
  • ionics
  • reservoir computing
  • solid electrolyte

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