Anisotropic Spin Distribution and Perpendicular Magnetic Anisotropy in a Layered Ferromagnetic Semiconductor (Ba,K)(Zn,Mn)2As2

Shoya Sakamoto, Guoqiang Zhao, Goro Shibata, Zheng Deng, Kan Zhao, Xiancheng Wang, Yosuke Nonaka, Keisuke Ikeda, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Tsuneharu Koide, Arata Tanaka, Sadamichi Maekawa, Yasutomo J. Uemura, Changqing Jin, Atsushi Fujimori

Research output: Contribution to journalArticlepeer-review

Abstract

The perpendicular magnetic anisotropy of a layered ferromagnetic semiconductor (Ba,K)(Zn,Mn)2As2 is studied using angle-dependent X-ray magnetic circular dichroism (XMCD) measurements. The large magnetic anisotropy with an anisotropy field of 0.85 T is deduced by fitting the Stoner-Wohlfarth model to the magnetic-field-angle dependence of the projected magnetic moment. Transverse XMCD spectra highlight the anisotropic distribution of Mn 3d electrons, where the dxz and dyz orbitals are less populated than the dxy state because of the D2d splitting that arises from the elongated MnAs4 tetrahedra. The magnetic anisotropy originates from the degeneracy lifting of p-dxz, dyz hybridized states at the Fermi level. Namely, spin-orbit coupling lifts their degeneracy and induces energy gain when spins align along the z direction. The present system offers another tuning knob to control magnetic anisotropy through atomic orbital engineering.

Original languageEnglish
Pages (from-to)789-794
Number of pages6
JournalACS Applied Electronic Materials
Volume3
Issue number2
DOIs
Publication statusPublished - 23 Feb 2021

Keywords

  • angle-dependent X-ray magnetic circular dichroism
  • ferromagnetic semiconductor
  • magnetic anisotropy
  • single crystal
  • spintronics

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