Abstract
The electron-beam-induced reaction in the precursor thin films of ferroelectric SrBi2Ta2O9 was investigated by infrared spectroscopy. Precursor solutions were prepared by mixing metal 2-ethylhexanoates. An electron beam was irradiated on the precursor thin films formed on Ag/SiO2/Si substrates. Total electron doses were adjusted ranging from 0 to 1.9×10-3 C/cm2. As a result, it was found that the electron beam resolved -COO- in the metal 2-ethylhexanoates, and metal atoms lost hydrophobic groups and remained in the films as a form of hydroxide. It is a reason why precursor thin films are changed to be insoluble in organic solvents by electron beam irradiation. The SrBi2Ta2O9 patterns fabricated by the electron-beam-induced process were very leaky though the thin films prepared using the same solutions exhibited good ferroelectric properties.
| Original language | English |
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| Pages | 171-174 |
| Number of pages | 4 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: 24 Aug 1998 → 27 Aug 1998 |
Conference
| Conference | Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) |
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| City | Montreaux, Switz |
| Period | 24/08/98 → 27/08/98 |