Analysis of minority carrier lifetime for InAlAs/InGaAs high electron mobility transistors by using 1.55-μm femto-second pulse laser

Keyphrases

• 2-dimensional Electron Gas (2DEG) 33%
• AuGe 33%
• Auger Recombination 66%
• Continuous Wave 33%
• Drain Current 66%
• Drain Voltage 33%
• Femtosecond Pulses 100%
• High Electron Mobility Transistor 100%
• InAlAs 100%
• InGaAs 100%
• InP Substrate 33%
• Lattice Matching 33%
• Material System 33%
• Minority Carrier Lifetime 100%
• Optical Power 100%
• Optical Pulses 33%
• Optical Response 33%
• Oscilloscope 33%
• Photoexcited Holes 33%
• Power Dependence 33%
• Pulsed Laser 100%
• Response Measurement 33%
• Saturation Phenomenon 33%
• Sheet Concentration 33%
• Source Area 66%
• Steady State 33%
• Transit Time 33%
• Wafer 33%

Engineering

• Auger Recombination 66%
• Carrier Lifetime 100%
• Continuous Wave 33%
• Current Drain 66%
• Drain Voltage 33%
• Indium Gallium Arsenide 100%
• Material System 33%
• Minority Carriers 100%
• Optical Power 100%
• Optical Pulse 33%
• Oscilloscope 33%
• Source Region 66%
• Theoretical Investigation 33%
• Two Dimensional 33%

Material Science

• Carrier Lifetime 100%
• Electron Mobility 100%
• Indium Gallium Arsenide 100%
• Laser Pulse 100%
• Optical Power 100%
• Transistor 100%