Analysis of energy states where electrons and holes coexist in pseudomorphically strained InAs high-electron-mobility transistors

Yui Nishio, Takato Sato, Naomi Hirayama, Tsutomu Iida, Yoshifumi Takanashi

Research output: Contribution to journalArticle

Abstract

In strained high-electron-mobility transistors (HEMTs) with In As as the channel, excess electrons and holes are generated in the drain region by impact ionization. In the source region, electrons are injected to recombine with accumulated holes by the Auger process. This causes the shift of the gate potential, VGS,shift, for HEMTs. For a system where electrons and holes coexist, we established a theory taking into account the non parabolicity of the conduction band in the InAs channel. This theory enables us to rigorously determine not only the energy states and the concentration profiles for both carriers but also the VGS,shift due to an accumulation of holes. We have derived the Auger recombination theory which takes into account the Fermi-Dirac statistics and is applicable to an arbitrary shape of potential energy. The Auger recombination lifetime τA for InAs-PHEMTs was estimated as a function of the sheet hole concentration, ρs, and τA was on the order of psec for ρs exceeding 1012cm-2.

Original languageEnglish
Article number04EG08
JournalJapanese Journal of Applied Physics
Volume55
Issue number4
DOIs
Publication statusPublished - 1 Apr 2016

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