An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process

Ikuo Suda, Ryo Kishida, Kazutoshi Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We propose an aging degradation suppression scheme at constant performance by controlling supply voltage and body bias for an FDSOI device. Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement results of ring oscillators in a 65 nm FDSOI, PBTI- and NBTI-induced degradations can be reduced by 71% and 66% at 1.5 V supply voltage and 0.20 V forward body bias paying the penalty of 3.03x static power increase. From simulation results by a 16-bit ALU, the figure of merit defined by the product of the time exponent n from NBTI, static and dynamic power consumption becomes almost constant at any body bias.

Original languageEnglish
Title of host publication2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesP41-P45
ISBN (Electronic)9781665479509
DOIs
Publication statusPublished - 2022
Event2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, United States
Duration: 27 Mar 202231 Mar 2022

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2022-March
ISSN (Print)1541-7026

Conference

Conference2022 IEEE International Reliability Physics Symposium, IRPS 2022
Country/TerritoryUnited States
CityDallas
Period27/03/2231/03/22

Keywords

  • bias temperature instability (BTI)
  • forward body bias (FBB)
  • ring oscillator (RO)

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