A 128-GHz Broadband CMOS Amplifier with Distributed Resonance Frequencies of Parasitic Shunt LC Resonators

Hajime Sakai, Kyoya Takano, Yohtaro Umeda, Shinsuke Hara, Akifumi Kasamatsu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The realization of ultra-high-speed wireless communications in the 300-GHz band is expected. A 300-GHz transceiver requires broadband intermediate-frequency amplifiers in the D-band. To realize a broadband amplifier in the D-band, we propose an amplifier with distributed resonance frequencies of shunt LC resonators. The resonators are composed of the gate-to-drain parasitic capacitances and the shunt inductors in the gate-side intermediate networks. To achieve a flat frequency response, the number of high frequency resonators should be greater than the number of low frequency resonators. The proposed amplifier is fabricated using a 45-nm SOI CMOS process. It is shown that the proposed amplifier has the center frequency of 128 GHz, the gain of 10.4 dB and the-3 dB bandwidth of 19 GHz. The performance of the proposed amplifier is compared to the state-of-the-art CMOS amplifiers, and it is shown that the proposed amplifier achieves wide bandwidth in the D-band.

Original languageEnglish
Title of host publicationGSMM 2021 - 2021 Global Symposium on Millimeter-Waves and Terahertz, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665437431
DOIs
Publication statusPublished - 23 May 2021
Event13th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2021 - Nanjing, China
Duration: 23 May 202126 May 2021

Publication series

NameGSMM 2021 - 2021 Global Symposium on Millimeter-Waves and Terahertz, Proceedings

Conference

Conference13th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2021
Country/TerritoryChina
CityNanjing
Period23/05/2126/05/21

Keywords

  • CMOS
  • D-band
  • LC resonator
  • multistage amplifiers
  • wide bandwidth

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