A 1Kb ECL RAM with an address access time of 0. 85 ns and a power dissipation of 950 mW has been developed. Such performance is achieved using SST technology with 1 mu m rule and high speed circuit design. The emitter width of the transistor is 0. 5 mu m and the cutoff frequency is 12. 4 GHz at V//C//E equals 3 V. The minimum metallization pitch is 3 mu m in the first layer and 6 mu m in the second layer.
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||4|
|Publication status||Published - 1 Dec 1984|
|Name||Conference on Solid State Devices and Materials|