Keyphrases
Resistive Random Access Memory (ReRAM)
100%
Resistive Switching
27%
Resistance to Change
26%
Ionic Liquid
21%
Vortex Core
20%
HfO2
19%
Storage Characteristics
19%
Conductive Bridging Random Access Memory (CBRAM)
17%
Reset Current
15%
Transition Metal Oxides
14%
YBa2Cu3O7
14%
Electronic States
13%
Memory Cell
12%
Bottom Electrode
11%
Binary Transition Metal Oxides
11%
Reset Process
11%
Ga-doped ZnO
11%
Memory Structure
11%
Cantilever
11%
Conductive Atomic Force Microscopy (C-AFM)
11%
Set Voltage
11%
Data Retention
10%
Change Effect
10%
Mixed State
10%
Grain Boundary
9%
Quasiparticles
9%
Retention Characteristics
9%
Neural Network
9%
Secondary Electron Image
9%
Storage Layer
9%
Low Resistance State
9%
High Resistance State
9%
Resistive Switching Properties
9%
Surface Impedance Measurement
9%
Metal Oxide
8%
Oxygen Vacancy
8%
V-set
8%
Bi-2212 Single Crystal
8%
Oxide-based
8%
Chest X-ray Images
8%
Switching Mechanism
8%
Atomic Force Microscope
8%
Resistive Switching Model
7%
Bias Polarity
7%
Resistance Switching
7%
BaTiO3 Film
7%
Barium Titanate
7%
Bi-2212
7%
Cellular Structure
7%
Transition Metal Oxide Thin Films
7%
Material Science
Resistive Random-Access Memory
67%
Film
41%
Transition Metal Oxide
37%
Surface (Surface Science)
27%
Ionic Liquid
22%
ZnO
16%
Single Crystal
16%
Oxygen Vacancy
12%
Metal Oxide
12%
Thin Films
11%
Oxide Compound
11%
Atomic Force Microscopy
11%
Oxide Film
11%
Magnetron Sputtering
10%
Grain Boundary
9%
Physical Property
9%
Redox Process
8%
Anode
7%
Memory Effect
6%
Copper Ion
6%
Capacitance
5%
Scanning Electron Microscopy
5%
Electrical Resistivity
5%
Density
5%
Engineering
Resistive Random Access Memory
55%
Resistive
44%
Resistance Change
13%
Data Retention
11%
Reset Process
10%
Random Access Memory
9%
Reliability Availability and Maintainability (Reliability Engineering)
9%
Polycrystalline
9%
Electric Field
8%
Thin Films
7%
Test Cell
7%
High Resistance State
7%
Oxide Film
6%
One Dimensional
6%
Oxygen Vacancy
6%
Conductive Path
5%
Experimental Result
5%
Input Pattern
5%
Memory Effect
5%
Surface Grain
5%
Atomic Force Microscope
5%
