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Fingerprint Dive into the research topics where Akira Endoh is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 16 Similar Profiles
High electron mobility transistors Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
Cutoff frequency Engineering & Materials Science
Transconductance Engineering & Materials Science
Electrons Engineering & Materials Science
Fabrication Engineering & Materials Science
Molten materials Chemical Compounds
aluminum gallium arsenides Physics & Astronomy

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Research Output 1986 2016

1 Citation (Scopus)

Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications

Watanabe, I., Yamashita, Y., Endo, A., Hara, S., Kasamatsu, A., Hosako, I., Hamada, H., Kosugi, T., Yaita, M., Moutaouakil, A. E., Matsuzaki, H., Kagami, O., Takahashi, T., Kawano, Y., Nakasha, Y., Hara, N., Tsuji, D., Isono, K., Fujikawa, S. & Fujishiro, H., 21 Nov 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest. Institute of Electrical and Electronics Engineers Inc., 7751063. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC; vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Terahertz waves
Monolithic microwave integrated circuits
wireless communication
High electron mobility transistors
research and development
1 Citation (Scopus)

Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

Endo, A., Watanabe, I., Kasamatsu, A. & Mimura, T., 20 Oct 2014, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Institute of Electrical and Electronics Engineers Inc., p. 261-264 4 p. 6931613. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

InGaAs
High electron mobility transistors
Monte Carlo Simulation
Electron
Electric fields

Comparative study on frequency limits of nanoscale HEMTs with various channel materials

Nagai, Y., Nagai, S., Sato, J., Hara, S., Fujishiro, H., Endo, A., Watanabe, I. & Kasamatsu, A., 26 Aug 2013, 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013. 6562649. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Electrons
Monte Carlo simulation
2 Citations (Scopus)

DC and RF characteristics of In0.52Al0.48As/In 0.7Ga0.3As HEMTs at 300 and 16 K

Endo, A., Watanabe, I., Mimura, T. & Matsui, T., 31 Jan 2013, In : Electronics Letters. 49, 3, p. 217-219 3 p.

Research output: Contribution to journalArticle

Cutoff frequency
Transconductance
High electron mobility transistors
Ballistics
Electrons

Monte Carlo simulation of InAlAs/InGaAs HEMTs with buried gate

Endoh, A., Watanabe, I., Kasamatsu, A. & Mimura, T., 26 Aug 2013, 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013. 6562605. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cutoff frequency
Transconductance
High electron mobility transistors
Capacitance
Electrodes