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Fingerprint Dive into the research topics where Akira Endoh is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Research Output

Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained-Al0.40In0.60Sb/Al1–yInySb Stepped Buffer

Hiraoka, M., Endoh, Y., Osawa, K., Kishimoto, N., Hayashi, T., Machida, R., Watanabe, I., Yamashita, Y., Hara, S., Gotow, T., Kasamatsu, A., Endoh, A. & Fujishiro, H. I., 1 Feb 2020, In : Physica Status Solidi (A) Applications and Materials Science. 217, 3, 1900516.

Research output: Contribution to journalArticle

  • InGaAs photo field-effect-transistors (PhotoFETs) on half-inch Si wafer using layer transfer technology

    Maeda, T., Ishii, H., Chang, W. H., Shimizu, T., Ishii, H., Ohishi, K., Endoh, A. & Fujishiro, H., 1 Apr 2020, In : Japanese Journal of Applied Physics. 59, SG, SGGE03.

    Research output: Contribution to journalArticle

    Open Access
  • Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications

    Watanabe, I., Yamashita, Y., Endoh, A., Hara, S., Kasamatsu, A., Hosako, I., Hamada, H., Kosugi, T., Yaita, M., Moutaouakil, A. E., Matsuzaki, H., Kagami, O., Takahashi, T., Kawano, Y., Nakasha, Y., Hara, N., Tsuji, D., Isono, K., Fujikawa, S. & Fujishiro, H. I., 21 Nov 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest. Institute of Electrical and Electronics Engineers Inc., 7751063. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC; vol. 2016-November).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

    Endoh, A., Watanabe, I., Kasamatsu, A. & Mimura, T., 20 Oct 2014, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Institute of Electrical and Electronics Engineers Inc., p. 261-264 4 p. 6931613. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2 Citations (Scopus)

    Comparative study on frequency limits of nanoscale HEMTs with various channel materials

    Nagai, Y., Nagai, S., Sato, J., Hara, S., Fujishiro, H., Endo, A., Watanabe, I. & Kasamatsu, A., 26 Aug 2013, 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013. 6562649. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution