Keyphrases
2p States
10%
Activation Energy
9%
Angle-resolved Photoemission
10%
Angle-resolved Photoemission Spectroscopy (ARPES)
14%
Annealing
12%
Antiferromagnetic
13%
Antiferromagnetic Order
9%
Band Gap
11%
Band Structure Calculations
9%
Banded Structure
9%
Bi-2212
11%
Bi4Ti3O12 Thin Film
13%
Biexciton
20%
BiFeO3
13%
BiFeO3 Film
17%
Charge Excitation
14%
Charge Ordering
9%
Chemical Solution Deposition
10%
Cluster Model
9%
Coercive Field
10%
Copolymer
9%
Copper Chloride
16%
Copper(II) Oxide
9%
CuO2 Plane
14%
Cuprate Superconductors
9%
Cuprates
43%
Density Matrix Renormalization Group
11%
Density of States
10%
Doping Dependence
11%
Electrical Conductivity
19%
Electrical Properties
12%
Electron Doping
20%
Electronic States
32%
Electronic Structure
67%
Exact Diagonalization
12%
Excitation Spectrum
10%
Exciton
10%
Fermi Level
24%
Fermi Surface
13%
Ferroelectric Properties
24%
Film Thickness
10%
High Energy
10%
High-resolution
11%
High-Tc Cuprates
17%
Hole Doping
18%
Hubbard Model
12%
Icosahedral Quasicrystal
9%
Insulator
9%
J Model
15%
Low Energy
12%
Low Temperature
15%
Magnetic Field
16%
Magnetic Properties
19%
Magnetization
10%
Magnetoresistance
10%
Metal-insulator Transition
9%
Metal-organic Chemical Vapor Deposition (MOCVD)
14%
Mott Insulator
29%
Optical Conductivity
16%
Pb(Zr,Ti)O3
20%
Phonons
14%
Photoemission
16%
Photoemission Spectra
14%
Photoemission Spectroscopy
17%
Protonic Conductor
9%
Pseudogap
15%
Quantum Dots
13%
Quasiparticles
14%
Remanent Polarization
16%
Resistive Random Access Memory (ReRAM)
28%
Resistivity
9%
Resonant Inelastic X-ray Scattering
25%
Resonant Photoemission Spectroscopy
9%
RF Magnetron Sputtering
11%
Room Temperature
14%
Si Substrate
10%
Silica
11%
Single Crystal
30%
Soft X-ray Absorption Spectroscopy
23%
Spectral Function
16%
Spectral Weight
18%
Spin Dynamics
11%
Spin Excitations
15%
SrTiO3
9%
Structural Properties
10%
Superconducting Gap
17%
Superconducting State
10%
Superconductivity
29%
Superconductor
20%
Temperature Effect
34%
Terahertz
9%
Trifluoroethylene
13%
Tunneling
14%
Tunneling Conductance
16%
Tunneling Spectroscopy
11%
Two Dimensional
24%
Underdoped
10%
Valence Band
21%
Vinylidene Fluoride
13%
X-ray Absorption Spectroscopy
17%
Material Science
Activation Energy
9%
Angle-Resolved Photoemission Spectroscopy
15%
Anisotropy
5%
Annealing
6%
Bismuth
10%
Bismuth Ferrite
28%
Capacitor
9%
Carrier Concentration
6%
Chemical Vapor Deposition
14%
Conductor
11%
Copolymer
10%
Crystal Structure
11%
Cuprate
47%
Density
59%
Diamond
5%
Dielectric Material
9%
Doping (Additives)
5%
Electrical Conductivity
5%
Electrical Resistivity
31%
Fermi Liquid
6%
Ferroelectric Material
43%
Ferroelectricity
24%
Film
100%
Film Thickness
7%
Gallium Arsenide
7%
Heat Treatment
7%
Hole Concentration
6%
Ionic Liquid
8%
Iron-Based Superconductors
5%
Lanthanum
7%
Laser Ablation
5%
Lattice Constant
5%
Magnetic Property
17%
Magnetic Susceptibility
7%
Magnetoresistance
7%
Magnetron Sputtering
14%
Multiferroic Material
8%
Nuclear Magnetic Resonance
11%
Optical Property
5%
Organic Conductor
5%
Oxide Compound
34%
Oxide Superconductors
6%
Oxygen Vacancy
10%
Photoemission Spectroscopy
38%
Photoluminescence
12%
Physical Property
11%
Piezoelectric Property
8%
Piezoelectricity
13%
Quantum Dot
7%
Quasicrystal
6%
Resistive Random-Access Memory
20%
Silicon
5%
Silicon Carbide
6%
Single Crystal
40%
Solution (Chemistry)
16%
Spin Relaxation
5%
Strontium
5%
Superconducting Material
55%
Superconductivity
39%
Surface (Surface Science)
54%
Surface Active Agent
6%
Thermoelectrics
6%
Thick Films
6%
Thin Films
97%
Titanium
5%
Titanium Dioxide
8%
Transistor
8%
Transition Metal Oxide
10%
X-Ray Absorption Spectroscopy
11%
X-Ray Diffraction
12%
X-Ray Emission Spectroscopy
10%
X-Ray Spectroscopy
10%
ZnO
8%
Engineering
Activation Energy
5%
Band Gap
8%
Band Structure
8%
Binding Energy
6%
Chemical Vapor Deposition
10%
Coercive Field
6%
Degree of Freedom
7%
Deposited Film
9%
Dielectrics
6%
Doping Dependence
5%
Electric Field
12%
Electronic State
46%
Excitation Spectrum
8%
Experimental Result
6%
Femtosecond Laser
7%
Fermi Level
12%
Gallium Arsenide
6%
Ground State
9%
Heat Treatment
5%
Hysteresis Loop
7%
Low-Temperature
8%
Magnetic Field
5%
One Dimensional
25%
Photoemission
53%
Piezoelectric
9%
Polycrystalline
12%
Precursor Solution
5%
Ray Absorption
9%
Ray Diffraction
5%
Resistive
12%
Resistive Random Access Memory
15%
Room Temperature
7%
Si Substrate
10%
Silicon Dioxide
10%
Substrate Temperature
5%
Superconductivity
5%
Superconductor
14%
Switching Time
8%
Temperature Dependence
10%
Terahertz
8%
Thin Films
69%
Tunnel Construction
16%
Two Dimensional
16%
Valence Band
14%
Vapor Deposition
7%